PDTA143ZMB Datasheet, PDF (3/11 Pages) NXP Semiconductors – PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

NXP Semiconductors
PDTA143ZMB
PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_CBO
V_CEO
V_EBO
V_I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
open emitter
open base
open collector
positive
negative
I_O
I_CM
P_tot
T_j
T_amb
T_stg
output current
peak collector current
total power dissipation
junction temperature
ambient temperature
storage temperature
pulsed; t_p ≤ 1 ms
T_amb ≤ 25 °C
Min
-
-
-
-
-
-
-
[1]
-
-
-65
-65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Max Unit
-50 V
-50 V
-5
V
5
V
-30 V
-100 mA
-100 mA
250 mW
150 °C
150 °C
150 °C
300
P_tot
(mW)
200
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100
0
-75
-25
25
75
FR4 PCB, standard footprint
Fig 2. Power derating curve for DFN1006B-3 (SOT883B)
125
175
T_amb (°C)
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
R_th(j-a)
thermal resistance
in free air
[1]
from junction to
ambient
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Min Typ Max Unit
-
-
500 K/W
PDTA143ZMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 29 June 2012
© NXP B.V. 2012. All rights reserved.
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