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| PDTA143ZMB Datasheet, PDF (4/11 Pages) NXP Semiconductors – PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ | |||
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NXP Semiconductors
PDTA143ZMB
PNP resistor-equipped transistor; R1 = 4.7 kâ¦, R2 = 47 kâ¦
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab603
1
10â5
10â4
10â3
10â2
10â1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
ICBO
ICEO
IEBO
hFE
VCEsat
VI(off)
VI(on)
R1
R2/R1
CC
fT
Characteristics
Parameter
Conditions
collector-base cut-off VCB = -50 V; IE = 0 A; Tamb = 25 °C
current
collector-emitter cut-off
current
emitter-base cut-off
current
VCE = -30 V; IB = 0 A; Tamb = 25 °C
VCE = -30 V; IB = 0 A; Tj = 150 °C
VEB = -5 V; IC = 0 A; Tamb = 25 °C
DC current gain
collector-emitter
saturation voltage
VCE = -5 V; IC = -10 mA; Tamb = 25 °C
IC = -5 mA; IB = -0.25 mA; Tamb = 25 °C
off-state input voltage
on-state input voltage
bias resistor 1 (input)
bias resistor ratio
VCE = -5 V; IC = -100 µA; Tamb = 25 °C
VCE = -0.3 V; IC = -5 mA; Tamb = 25 °C
Tamb = 25 °C
collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
transition frequency
VCE = -5 V; IC = -10 mA; f = 100 MHz; [1]
Tamb = 25 °C
[1] Characteristics of built-in transistor.
Min Typ Max Unit
-
-
-100 nA
-
-
-1
µA
-
-
-5
µA
-
-
-170 µA
100 -
-
-
-
-100 mV
-
-0.6 -0.5 V
-1.3 -0.9 -
V
3.3 4.7 6.1 kâ¦
8
10 12
-
-
3
pF
-
180 -
MHz
PDTA143ZMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 29 June 2012
© NXP B.V. 2012. All rights reserved.
4 of 11
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