PDTA143X Datasheet, PDF (6/12 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW

NXP Semiconductors
PDTA143X series
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
10³
h_FE
10²
10
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(1)
(2)
(3)
−10³
V_CEsat
(mV)
−10²
(1)
(2)
(3)
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1
−10^−1
−1
−10
−10²
I_C (mA)
V_CE = −5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−10
V_I(on)
(V)
−8
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−10
−1
−10
−10²
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
−2.0
V_I(off)
(V)
−1.6
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−6
−4
(1)
(2)
−2
(3)
−1.2
(1)
(2)
−0.8
(3)
−0.4
0
−10^−1
−1
−10
−10²
I_C (mA)
0
−10^−2
−10^−1
−1
−10
I_C (mA)
V_CE = −0.3 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 3. On-state input voltage as a function of collector
current; typical values
V_CE = −5 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 4. Off-state input voltage as a function of collector
current; typical values
PDTA143X_SER_4
Product data sheet
Rev. 04 — 16 April 2007
© NXP B.V. 2007. All rights reserved.
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