PDTA143X Datasheet, PDF (5/12 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW

NXP Semiconductors
PDTA143X series
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
collector-base cut-off V_CB = −50 V; I_E = 0 A
current
I_CEO
collector-emitter
cut-off current
V_CE = −30 V; I_B = 0 A
V_CE = −30 V; I_B = 0 A;
T_j = 150 °C
I_EBO
emitter-base cut-off V_EB = −5 V; I_C = 0 A
current
h_FE
V_CEsat
V_I(off)
V_I(on)
R1
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
V_CE = −5 V; I_C = −10 mA
I_C = −10 mA;
I_B = −0.5 mA
V_CE = −5 V; I_C = −100 µA
V_CE = −0.3 V;
I_C = −20 mA
R2/R1 bias resistor ratio
C_c
collector capacitance V_CB = −10 V; I_E = i_e = 0 A;
f = 1 MHz
Min
-
-
-
-
50
-
-
−2.5
3.3
1.7
-
Typ
-
-
-
-
-
-
−0.9
−1.5
4.7
2.1
-
Max Unit
−100 nA
−1
µA
−50 µA
−600 µA
-
−150 mV
−0.3 V
-
V
6.1
kΩ
2.6
3
pF
PDTA143X_SER_4
Product data sheet
Rev. 04 — 16 April 2007
© NXP B.V. 2007. All rights reserved.
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