PDTA143X Datasheet, PDF (3/12 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW

NXP Semiconductors
PDTA143X series
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
3. Ordering information
4. Marking
Table 4. Ordering information
Type number
Package
Name Description
Version
PDTA143XE
SC-75 plastic surface-mounted package; 3 leads
SOT416
PDTA143XK
SC-59A plastic surface-mounted package; 3 leads
SOT346
PDTA143XM
SC-101 leadless ultra small plastic package; 3 solder lands; SOT883
body 1.0 × 0.6 × 0.5 mm
PDTA143XS^[1]
SC-43A plastic single-ended leaded (through hole) package; SOT54
3 leads
PDTA143XT
-
plastic surface-mounted package; 3 leads
SOT23
PDTA143XU
SC-70 plastic surface-mounted package; 3 leads
SOT323
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
Table 5. Marking codes
Type number
PDTA143XE
PDTA143XK
PDTA143XM
PDTA143XS
PDTA143XT
PDTA143XU
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code^[1]
35
25
DN
TA143X
*31
*46
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V_CBO
collector-base voltage
open emitter
-
−50
V
V_CEO
collector-emitter voltage open base
-
−50
V
V_EBO
emitter-base voltage
open collector
-
−7
V
V_I
input voltage
positive
-
+7
V
negative
-
−20
V
I_O
output current
I_CM
peak collector current
single pulse;
t_p ≤ 1 ms
-
−100
mA
-
−100
mA
PDTA143X_SER_4
Product data sheet
Rev. 04 — 16 April 2007
© NXP B.V. 2007. All rights reserved.
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