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| N0118GA Datasheet, PDF (6/13 Pages) NXP Semiconductors – SCR | |||
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NXP Semiconductors
N0118GA
SCR
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
IGT
gate trigger current
IL
latching current
IH
holding current
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
IR
reverse current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
Conditions
VD = 12 V; IT = 10 mA; Tj = 25 °C;
see Figure 7
VD = 12 V; IG = 0.1 A; Tj = 25 °C;
see Figure 8
VD = 12 V; Tj = 25 °C; see Figure 9;
see Figure 10
IT = 1.6 A; Tj = 25 °C; see Figure 11
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 12
VD = 600 V; Tj = 25 °C; RGK = 1 kâ¦
VD = 600 V; Tj = 125 °C; RGK = 1 kâ¦
Tj = 25 °C; RGK = 1 kâ¦; VR = 600 V
Tj = 125 °C; RGK = 1 kâ¦; VR 600 V
VDM = 402 V; Tj = 125 °C; RGK = 1 kâ¦;
exponential waveform; see Figure 13;
see Figure 14
Min Typ Max Unit
0.5 -
7
µA
-
-
6
mA
-
-
5
mA
-
1.4 1.95 V
-
-
0.8 V
-
-
10 µA
-
-
100 µA
-
-
10 µA
-
-
100 µA
75 -
-
V/µs
2.5
IGT
IGT(25°C)
2.0
003aag291
1.5
1.0
0.5
0
-50
0
50
100
150
Tj (°C)
1.6
IL
IL(25°C)
1.2
003aag292
0.8
0.4
-50
0
50
100
150
Tj (°C)
Fig 7. Normalized gate trigger current as a function of Fig 8. Normalized latching current as a function of
junction temperature
junction temperature
N0118GA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 11 July 2011
© NXP B.V. 2011. All rights reserved.
6 of 13
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