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N0118GA Datasheet, PDF (1/13 Pages) NXP Semiconductors – SCR
N0118GA
SCR
Rev. 1 — 11 July 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated ultra sensitive gate Silicon Controlled Rectifier in a SOT54 (T0-92)
plastic package.
1.2 Features and benefits
 High voltage capability
 Planar passivated for voltage
ruggedness and reliability
 Ultra sensitive gate
1.3 Applications
 Electronic ballasts
 Safety shut down and protection
circuits
 Sensing circuits
 Smoke detectors
 Switched Mode Power Supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDRM
repetitive peak
off-state voltage
VRRM
repetitive peak reverse
voltage
ITSM
IT(AV)
non-repetitive peak
on-state current
average on-state
current
half sine wave; Tj(init) = 25 °C;
tp = 10 ms; see Figure 4;
see Figure 5
half sine wave; Tlead ≤ 67 °C;
see Figure 3
IT(RMS)
RMS on-state current half sine wave; Tlead ≤ 67 °C;
see Figure 1; see Figure 2
Static characteristics
IGT
gate trigger current VD = 12 V; IT = 10 mA;
Tj = 25 °C; see Figure 7
Min Typ Max Unit
-
-
600 V
-
-
600 V
-
-
8
A
-
-
0.51 A
-
-
0.8 A
0.5 -
7
µA