N0118GA Datasheet, PDF (2/13 Pages) NXP Semiconductors – SCR

NXP Semiconductors
N0118GA
SCR
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
A
anode
G
gate
K
cathode
Simplified outline
Graphic symbol
A
K
G
sym037
3. Ordering information
321
SOT54 (TO-92)
Table 3. Ordering information
Type number
Package
Name
N0118GA
TO-92
4. Limiting values
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DRM
V_RRM
I_T(AV)
I_T(RMS)
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
half sine wave; T_lead ≤ 67 °C; see Figure 3
half sine wave; T_lead ≤ 67 °C; see Figure 1;
see Figure 2
I_TSM
non-repetitive peak on-state
half sine wave; T_j(init) = 25 °C; t_p = 10 ms;
current
see Figure 4; see Figure 5
I²t
dI_T/dt
I_GM
V_RGM
P_GM
P_G(AV)
T_stg
T_j
I²t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
half sine wave; T_j(init) = 25 °C; t_p = 8.3 ms
t_p = 10 ms; sine-wave pulse
I_T = 0.8 A; I_G = 10 mA; dI_G/dt = 0.1 A/µs
over any 20 ms period
Min Max Unit
-
600 V
-
600 V
-
0.51 A
-
0.8 A
-
8
A
-
9
A
-
0.32 A²s
-
50 A/µs
-
1
A
-
5
V
-
2
W
-
0.1 W
-40 150 °C
-
125 °C
N0118GA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 July 2011
© NXP B.V. 2011. All rights reserved.
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