BUK7E07-55B Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7E07-55B
N-channel TrenchMOS standard level FET
300
I_D
(A)
200
100
0
0
20 10 9.0
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V_GS (V) = 8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
2
4
6
8
10
V_DS (V)
25
R_DSon
(mΩ)
20
15
10
5
0
5
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10
15
20
V_GS (V)
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
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25
R_DSon
(mΩ)
V_GS (V) = 6.0
6.5
20
7.0 _7.5
8.0
15
9.0
10
10
2
a
1.5
1
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0.5
5
0
0
100
T_j = 25 °C
200
300
I_D (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
0
−60
0
60
120
180
T_j (°C)
a = -_R---_D----^R_S---_o-^D--_n--^S₍--_2o--₅-ⁿ--_°--_C----₎
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7E07-55B_1
Product data sheet
Rev. 01 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
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