BUK7E07-55B Datasheet, PDF(1/12 Page) NXP Semiconductors – N-channel TrenchMOS standard level FET

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BUK7E07-55B Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7E07-55B

N-channel TrenchMOS standard level FET

Rev. 01 â 29 January 2008

Product data sheet

1. Product proï¬le

1.1 General description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package

using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has

been designed and qualiï¬ed to the appropriate AEC standard for use in Automotive critical

applications.

1.2 Features

I Very low on-state resistance

I 175 Â°C rated

I Q101 compliant

I Standard level compatible

1.3 Applications

I Automotive systems

I Motors, lamps and solenoids

I General purpose power switching

I 12 V and 24 V loads

1.4 Quick reference data

I EDS(AL)S â¤ 351 mJ

I ID â¤ 75 A

I RDSon = 5.8 mâ¦ (typ)

I Ptot â¤ 203 W

2. Pinning information

Table 1. Pinning

Pin Description

gate (G)

drain (D)

source (S)

mb mounting base; connected to drain (D)

Simpliï¬ed outline

Symbol

mbb076 S

123

SOT226 (I2PAK)

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