BUK7E07-55B Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7E07-55B
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
BUK7E07-55B
I2PAK
4. Limiting values
Description
Version
plastic single-ended package (I2PAK); low-profile 3-lead TO-220AB SOT226
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 2 and 3
-
-
-
[1] _-
[2]
55 V
55 V
±20 V
119 A
75 A
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 100 °C; V_GS = 10 V; see Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; see Figure 3
T_mb = 25 °C; see Figure 1
[2] _-
75 A
- 478 A
- 203 W
−55 +175 °C
−55 +175 °C
I_DR
reverse drain current
I_DRM
peak reverse drain current
Avalanche ruggedness
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
[2] _-
-
75 A
478 A
E_DS(AL)S
E_DS(AL)R
non-repetitive drain-source avalanche
energy
repetitive drain-source avalanche
energy
Unclamped inductive load; I_D = 75 A;
V_DS ≤ 55 V; V_GS = 10 V; R_GS = 50 Ω; starting at
T_j = 25 °C
Repetitive rating defined in Figure 16
-
[3] _-
351 mJ
-J
[1] Current is limited by chip power dissipation rating.
[2] Continuous current is limited by package.
[3] Conditions:
a) Maximum value not quoted.
b) Single-pulse avalanche rating limited by T_j(max) of 175 °C.
c) Repetitive avalanche rating limited by an average junction temperature of 170 °C.
d) Refer to application note AN10273 for further information.
BUK7E07-55B_1
Product data sheet
Rev. 01 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
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