BUK7E07-55B Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7E07-55B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V_(BR)DSS drain-source breakdown voltage I_D = 0.25 mA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
V_GS(th) gate-source threshold voltage I_D = 1 mA; V_DS = V_GS; see Figure 9 and 10
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
I_DSS
drain leakage current
V_DS = 55 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
I_GSS
gate leakage current
V_GS = ±20 V; V_DS = 0 V
R_DSon drain-source on-state resistance V_GS = 10 V; I_D = 25 A; see Figure 6 and 8
T_j = 25 °C
T_j = 175 °C
Dynamic characteristics
Q_G(tot)
Q_GS
Q_GD
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
L_D
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
I_D = 25 A; V_DS = 44 V; V_GS = 10 V;
see Figure 14
V_GS = 0 V; V_DS = 25 V; f = 1 MHz;
see Figure 12
V_DS = 30 V; R_L = 1.2 Ω;
V_GS = 10 V; R_G = 10 Ω
measured from drain lead 6 mm from
package to centre of die
L_S
internal source inductance
measured from source lead
to source bond pad
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
I_S = 25 A; V_GS = 0 V; see Figure 15
I_S = 20 A; dI_S/dt = −100 A/µs;
V_GS = 0 V; V_R = 30 V
Min Typ Max Unit
55 -
-
V
50 -
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
0.02 1
µA
-
-
500 µA
-
2
100 nA
-
5.8 7.1 mΩ
-
-
14.2 mΩ
-
53 -
nC
-
12 -
nC
-
17 -
nC
-
2820 3760 pF
-
554 665 pF
-
200 274 pF
-
24 -
ns
-
52 -
ns
-
77 -
ns
-
41 -
ns
-
4.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
62 -
ns
-
60 -
nC
BUK7E07-55B_1
Product data sheet
Rev. 01 — 29 January 2008
© NXP B.V. 2008. All rights reserved.
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