BUK663R5-55C Datasheet, PDF (6/11 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
3
V_GS(th)
(V)
2.25
1.5
max
typ
min
003aad001
0.75
0
-60
0
60
120
180
T_j ( °C)
BUK663R5-55C
N-channel TrenchMOS FET
2
03ne89
a
1.5
1
0.5
0
-60
0
60
120
180
Tj (°C)
Fig 4. Gate-source threshold voltage as a function of Fig 5. Normalized drain-source on-state resistance
junction temperature
factor as a function of junction temperature
BUK663R5-55C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 3 August 2010
© NXP B.V. 2010. All rights reserved.
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