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BUK663R5-55C Datasheet, PDF (5/11 Pages) NXP Semiconductors – N-channel TrenchMOS FET
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NXP Semiconductors
BUK663R5-55C
N-channel TrenchMOS FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
LD
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
LS
internal source inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 4
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 4
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 4
VDS = 55 V; VGS = 0 V; Tj = 175 °C
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 5 V; ID = 15 A; Tj = 25 °C;
see Figure 5
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 5
VGS = 4.5 V; ID = 15 A; Tj = 25 °C;
see Figure 5
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 5
ID = 25 A; VDS = 40 V; VGS = 10 V
ID = 25 A; VDS = 40 V; VGS = 5 V
ID = 25 A; VDS = 40 V; VGS = 10 V
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω
from drain lead 6 mm from package
to centre of die ; Tj = 25 °C
from source lead to source bond
pad ; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C
IS = 20 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 25 V
BUK663R5-55C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 3 August 2010
Min Typ Max Unit
55 -
-
V
50 -
-
V
1.5 2.1 2.5 V
-
-
2.8 V
0.8 -
-
V
-
-
500 µA
-
0.02 1
µA
-
2
100 nA
-
2
100 nA
-
[tbd] [tbd] mΩ
-
2.7 3.5 mΩ
-
[tbd] [tbd] mΩ
-
-
7.4 mΩ
-
[tbd] [tbd] nC
-
[tbd] [tbd] nC
-
[tbd] [tbd] nC
-
[tbd] [tbd] nC
-
[tbd] [tbd] pF
-
[tbd] [tbd] pF
-
[tbd] [tbd] pF
-
[tbd] [tbd] ns
-
[tbd] [tbd] ns
-
[tbd] [tbd] ns
-
[tbd] [tbd] ns
-
4.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
[tbd] [tbd] ns
-
[tbd] [tbd] nC
© NXP B.V. 2010. All rights reserved.
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