BUK663R5-55C Datasheet, PDF (1/11 Pages) NXP Semiconductors – N-channel TrenchMOS FET

BUK663R5-55C
N-channel TrenchMOS FET
Rev. 01 — 3 August 2010
Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Suitable for intermediate level gate
drive sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V and 24 V Automotive systems
„ ABS/ESP
„ Engine management
„ HVAC
„ Motors, lamps and solenoid control
„ Transmission control
„ Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
P_tot
total power dissipation T_mb = 25 °C; see Figure 2
Static characteristics
R_DSon
drain-source on-state
resistance
Avalanche ruggedness
V_GS = 10 V; I_D = 15 A;
T_j = 25 °C; see Figure 5
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
I_D = 100 A; V_sup ≤ 55 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
55 V
[1] _-
-
100 A
-
-
263 W
-
2.7 3.5 mΩ
-
-
551 mJ