BUK663R5-55C Datasheet, PDF (3/11 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
BUK663R5-55C
N-channel TrenchMOS FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_j ≥ 25 °C; T_j ≤ 175 °C
-
-20
T_mb = 25 °C; V_GS = 10 V; see Figure 1 ^[1]
-
T_mb = 100 °C; V_GS = 10 V; see Figure 1 ^[1]
-
T_mb = 25 °C; t_p ≤ 10 µs; pulsed
-
T_mb = 25 °C; see Figure 2
-
-55
-55
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
[1]
-
-
E_DS(AL)S
E_DS(AL)R
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
I_D = 100 A; V_sup ≤ 55 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
-
[2][3][4] _-
[1] Continuous current is limited by package.
[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[3] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[4] Refer to application note AN10273 for further information.
Max Unit
55 V
20 V
100 A
100 A
757 A
263 W
175 °C
175 °C
100 A
757 A
551 mJ
-
J
200
I_D
(A)
160
(1)
120
003aac796
120
P_der
(%)
80
03na19
80
40
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK663R5-55C
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 3 August 2010
© NXP B.V. 2010. All rights reserved.
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