BTA202X Datasheet, PDF (6/12 Pages) NXP Semiconductors – 2 A Three-quadrant triacs high commutation

NXP Semiconductors
BTA202X series D and E
2 A Three-quadrant triacs high commutation
7. Static characteristics
Table 6. Static characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_GT
gate trigger current V_D = 12 V; I_T = 0.1 A;
see Figure 8
T2+ G+
T2+ G−
T2− G−
I_L
latching current
V_D = 12 V; I_GT = 0.1 A;
see Figure 10
T2+ G+
T2+ G−
T2− G−
I_H
holding current
V_D = 12 V; I_GT = 0.1 A;
see Figure 11
V_T
on-state voltage
I_T = 3 A; see Figure 9
V_GT
gate trigger voltage V_D = 12 V; I_T = 0.1 A;
see Figure 7
V_D = 400 V; I_T = 0.1 A;
T_j = 125 °C
I_D
off-state current
V_D = V_DRM(max); T_j = 125 °C
BTA202X-600D
BTA202X-800D
Min Typ Max
BTA202X-600E Unit
BTA202X-800E
Min Typ Max
0.25 -
0.25 -
0.25 -
5
0.5
-
10 mA
5
0.5
-
10 mA
5
0.5
-
10 mA
-
-
5
-
-
12 mA
-
-
10
-
-
20 mA
-
-
5
-
-
12 mA
-
-
5
-
-
12 mA
- 1.63 2
-
0.7 1.5
- 1.63 2 V
-
0.7 1.5 V
0.2 0.3
-
0.2 0.3
-V
-
0.1 0.5
-
0.1 0.5 mA
BTA202X_SER_D_E_1
Product data sheet
Rev. 01 — 7 February 2008
© NXP B.V. 2008. All rights reserved.
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