BTA202X Datasheet, PDF (2/12 Pages) NXP Semiconductors – 2 A Three-quadrant triacs high commutation

NXP Semiconductors
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base (isolated)
BTA202X series D and E
2 A Three-quadrant triacs high commutation
Simplified outline
mb
Graphic symbol
T2
T1
G
sym051
3. Ordering information
123
SOT186A (TO-220F)
Table 2. Ordering information
Type number Package
Name
Description
Version
BTA202X-600D TO-220F
BTA202X-600E
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3-lead TO-220 ‘full pack’
BTA202X-800D
BTA202X-800E
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DRM
repetitive peak off-state voltage
BTA202X-600D; BTA202X-600E
BTA202X-800D; BTA202X-800E
I_T(RMS)
RMS on-state current
full sine wave; T_h ≤ 110 °C; see
Figure 4 and 5
I_TSM
non-repetitive peak on-state current full sine wave; T_j = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
t = 16.7 ms
I²t
dI_T/dt
I_GM
P_GM
I²t for fusing
rate of rise of on-state current
peak gate current
peak gate power
t_p = 10 ms
I_TM = 1.5 A; I_G = 0.2 A;
dI_G/dt = 0.2 A/µs
Min
[1] _-
-
-
-
-
-
-
-
Max Unit
600
V
800
V
2
A
14
A
15.4 A
0.98
A²s
100
A/µs
2
A
5
W
BTA202X_SER_D_E_1
Product data sheet
Rev. 01 — 7 February 2008
© NXP B.V. 2008. All rights reserved.
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