BTA202X Datasheet, PDF (3/12 Pages) NXP Semiconductors – 2 A Three-quadrant triacs high commutation

NXP Semiconductors
BTA202X series D and E
2 A Three-quadrant triacs high commutation
Table 3. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
P_G(AV)
T_stg
T_j
average gate power
storage temperature
junction temperature
over any 20 ms period
Min
Max Unit
-
0.5
W
−40
+150 °C
-
125
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
3
P_tot
(W)
conduction form
angle factor
(degrees) a
30
4
60
2.8
2
90
2.2
α
120
1.9
180
1.57
1
003aac112
α = 180°
120°
90°
60°
30°
0
0
0.4
0.8
1.2
1.6
2
I_T(RMS) (A)
α = conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
20
I_TSM
(A)
16
003aac110
12
8
I_T
I_TSM
4
t
1/f
T_j(init) = 25 °C max
0
1
10
10²
10³
number of cycles
Fig 2.
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA202X_SER_D_E_1
Product data sheet
Rev. 01 — 7 February 2008
© NXP B.V. 2008. All rights reserved.
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