BC857M Datasheet, PDF (6/10 Pages) NXP Semiconductors – PNP general purpose transistors

NXP Semiconductors
PNP general purpose transistors
GRAPHICAL INFORMATION BC857BM
1000
handbook, halfpage
hFE
800
MLE192
600
(1)
400
(2)
200
(3)
0
−10^−2 −10^−1
−1
V_CE = −5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
−10
−10²
−10³
IC (mA)
Fig.6 DC current gain; typical values.
Product data sheet
BC857M series
−1200
handbook, halfpage
VBE
(mV)
−1000
(1)
−800
(2)
−600
(3)
−400
MLE193
−200
−10^−2 −10^−1
−1
V_CE = −5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
−10
−10²
−10³
IC (mA)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
−10⁴
handbook, halfpage
VCEsat
(mV)
−10³
MLE194
−10²
(1)
(2)
(3)
−10
−10^−1
−1
I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
−10
−10²
−10³
IC (mA)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
−1200
handbook, halfpage
VBEsat
(mV)
−1000
−800
−600
MLE195
(1)
(2)
(3)
−400
−200
−10^−1
−1
I_C/I_B = 20.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
−10
−10²
−10³
IC (mA)
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
6