BC857M Datasheet, PDF (3/10 Pages) NXP Semiconductors – PNP general purpose transistors

NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC857M series
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T_stg
T_j
T_amb
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C
note 1
note 2
MIN.
−
−
−
−
−
−
MAX.
−50
−45
−5
−100
−200
−100
UNIT
V
V
V
mA
mA
mA
−
250
mW
−
430
mW
−65
+150
°C
−
150
°C
−65
+150
°C
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm².
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 2
VALUE
500
290
UNIT
K/W
K/W
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm².
2004 Mar 10
3