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BC857M Datasheet, PDF (4/10 Pages) NXP Semiconductors – PNP general purpose transistors
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NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC857M series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
emitter-base cut-off current
hFE
DC current gain
BC857AM
BC857BM
BC857CM
VBE
base-emitter voltage
VCEsat
collector-emitter saturation voltage
Cc
collector capacitance
fT
transition frequency
F
noise figure
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
VCB = −30 V; IE = 0
VCB = −30 V; IE = 0; Tj = 150 °C
VEB = −5 V; IC = 0
VCE = −5 V; IC = −2 mA
IC = −2 mA; VCE = −5 V
IC = −10 mA; VCE = −5 V
IC = −10 mA; IB = −0.5 mA
IC = −100 mA; IB = −5 mA; note 1
IE = ie = 0; VCB = −10 V; f = 1 MHz
VCE = −5 V; IC = −10 mA;
f = 100 MHz
IC = −200 μA; VCE = −5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
MIN.
−
−
−
125
220
420
−600
−
−
−
−
100
−
MAX.
−15
−5
−100
UNIT
nA
μA
nA
250
475
800
−750
−820
−200
−400
2.5
−
10
mV
mV
mV
mV
pF
MHz
dB
2004 Mar 10
4
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