BC857M Datasheet, PDF (5/10 Pages) NXP Semiconductors – PNP general purpose transistors

NXP Semiconductors
PNP general purpose transistors
GRAPHICAL INFORMATION BC857AM
500
handbook, halfpage
hFE
400
(1)
300
MLE188
200
(2)
(3)
100
−^010−2
−10^−1
−1
V_CE = −5 V.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
−10
−10²
−10³
IC (mA)
Fig.2 DC current gain; typical values.
Product data sheet
BC857M series
−1200
handbook, halfpage
VBE
(mV)
−1000
(1)
−800
(2)
−600
(3)
−400
MLE189
−20_−010_{−2 −10−1}
−1
V_CE = −5 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
−10
−10²
−10³
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−10⁴
handbook, halfpage
VCEsat
(mV)
−10³
MLE190
−10²
(1)
(2)
(3)
−1_−010_−1
−1
I_C/I_B = 20.
(1) T_amb = 150 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
−10
−10²
−10³
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
−1200
handbook, halfpage
VBEsat
(mV)
−1000
−800
−600
MLE191
(1)
(2)
(3)
−400
−20_−010_−1
−1
I_C/I_B = 20.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 150 °C.
−10
−10²
−10³
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 10
5