74HC2GU04 Datasheet, PDF (6/15 Pages) NXP Semiconductors – Dual unbuffered inverter

NXP Semiconductors
74HC2GU04
Dual unbuffered inverter
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C Unit
Min Typ Max Min Max Max
(85 °C) (125 °C)
t_pd
propagation delay
nA to nY; see Figure 5 ^[1]
V_CC = 2.0 V; C_L = 50 pF
- 13 60 -
75
90 ns
V_CC = 4.5 V; C_L = 50 pF
- 6 12 -
15
18 ns
t_t
transition time
V_CC = 6.0 V; C_L = 50 pF
- 5 10 -
13
nY; see Figure 5
[2]
15 ns
V_CC = 2.0 V; C_L = 50 pF
V_CC = 4.5 V; C_L = 50 pF
- 18 75 -
95
- 6 15 -
19
125 ns
25 ns
V_CC = 6.0 V; C_L = 50 pF
- 5 13 -
16
20 ns
C_PD
power dissipation capacitance V_I = GND to V_CC
[3] _-
5
-
-
-
- pF
[1] t_pd is the same as t_PLH and t_PHL
[2] t_t is the same as t_TLH and t_THL
[3] C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i × N + Σ(C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in V;
N = number of inputs switching;
Σ(C_L × V_CC2 × f_o) = sum of the outputs.
12. Waveforms
V_I
nA input
GND
V_OH
nY output
V_OL
V_M
t _PHL
V_M
t _THL
V_M
V_M
10%
t _PLH
90%
t _TLH
mna722
Measurement points are given in Table 9.
V_OL and V_OH are typical voltage output drop that occur with the output load.
Fig 5. The data input (nA) to output (nY) propagation delays and output transition times
74HC2GU04_1
Product data sheet
Rev. 01 — 6 October 2006
© NXP B.V. 2006. All rights reserved.
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