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74HC2GU04 Datasheet, PDF (4/15 Pages) NXP Semiconductors – Dual unbuffered inverter
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NXP Semiconductors
74HC2GU04
Dual unbuffered inverter
10. Static characteristics
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Tamb = 25 °C
VIH
HIGH-level input voltage
VCC = 2.0 V
1.7
VCC = 4.5 V
3.6
VCC = 6.0 V
4.8
VIL
LOW-level input voltage
VCC = 2.0 V
-
VCC = 4.5 V
-
VCC = 6.0 V
-
VOH
HIGH-level output voltage
VI = VIH or VIL
IO = −20 µA; VCC = 2.0 V
IO = −20 µA; VCC = 4.5 V
IO = −20 µA; VCC = 6.0 V
IO = −4.0 mA; VCC = 4.5 V
IO = −5.2 mA; VCC = 6.0 V
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 µA; VCC = 2.0 V
IO = 20 µA; VCC = 4.5 V
IO = 20 µA; VCC = 6.0 V
1.9
4.4
5.9
4.13
5.63
-
-
-
IO = 4.0 mA; VCC = 4.5 V
-
IO = 5.2 mA; VCC = 6.0 V
-
II
input leakage current
VI = GND or VCC; VCC = 6.0 V
-
ICC
supply current
VI = GND or VCC; IO = 0 A;
-
VCC = 6.0 V
CI
input capacitance
-
Tamb = −40 °C to +85 °C
VIH
HIGH-level input voltage
VCC = 2.0 V
1.7
VCC = 4.5 V
3.6
VCC = 6.0 V
4.8
VIL
LOW-level input voltage
VCC = 2.0 V
-
VCC = 4.5 V
-
VCC = 6.0 V
-
VOH
HIGH-level output voltage
VI = VIH or VIL
IO = −20 µA; VCC = 2.0 V
IO = −20 µA; VCC = 4.5 V
IO = −20 µA; VCC = 6.0 V
IO = −4.0 mA; VCC = 4.5 V
IO = −5.2 mA; VCC = 6.0 V
1.9
4.4
5.9
4.13
5.63
Typ
1.1
2.4
3.1
0.9
2.1
2.9
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
-
-
3.0
1.1
2.4
3.1
0.9
2.1
2.9
2.0
4.5
6.0
4.32
5.81
Max
-
-
-
0.3
0.9
1.2
-
-
-
-
-
0.1
0.1
0.1
0.26
0.26
±0.1
1.0
-
-
-
-
0.3
0.9
1.2
-
-
-
-
-
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
pF
V
V
V
V
V
V
V
V
V
V
V
74HC2GU04_1
Product data sheet
Rev. 01 — 6 October 2006
© NXP B.V. 2006. All rights reserved.
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