PMEGXX10BEA Datasheet, PDF (5/11 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifier

NXP Semiconductors
1 A very low V_F MEGA Schottky
barrier rectifier
GRAPHICAL DATA
10⁴
handboo_Ik_F, halfpage
(mA)
10³
10²
(1) (2) (3)
MHC673
10
1
10^−1
0
0.2
0.4
0.6
VF (V)
PMEG2010BEA/PMEG2010BEV
(1) T_amb = 150 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
Product data sheet
PMEGXX10BEA;
PMEGXX10BEV
10⁵
handbo_Io_Rk, halfpage
(μA)
(1)
10⁴
10³
(2)
10²
(3)
10
MHC674
1
0
5
10
15
20
VR _(V)
PMEG2010BEA/PMEG2010BEV
(1) T_amb = 150 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
140
handbCoo_dk, halfpage
(pF)
120
100
80
60
40
20
0
0
5
MHC675
10
15
20
VR (V)
PMEG2010BEA/PMEG2010BEV
T_amb = 25 °C; f = 1 MHz.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
10⁴
handboo_Ik_F, halfpage
(mA)
10³
10²
(1) (2) (3)
MHC676
10
1
10^−1
0
0.2
0.4
0.6
VF (V)
PMEG3010BEA/PMEG3010BEV
(1) T_amb = 150 °C.
(2) T_amb = 85 °C.
(3) T_amb = 25 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
2004 Jun 14
5