PMEGXX10BEA Datasheet, PDF (2/11 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifier

NXP Semiconductors
1 A very low V_F MEGA Schottky
barrier rectifier
Product data sheet
PMEGXX10BEA;
PMEGXX10BEV
FEATURES
• Forward current: 1 A
• Reverse voltages: 20 V, 30 V, 40 V
• Very low forward voltage
• Ultra small and very small plastic SMD package
• Power dissipation comparable to SOT23.
APPLICATIONS
• High efficiency DC-to-DC conversion
• Voltage clamping
• Protection circuits
• Low voltage rectification
• Blocking diodes
• Low power consumption applications.
QUICK REFERENCE DATA
SYMBOL
I_F
V_R
PARAMETER
forward current
reverse voltage
MAX.
1
20; 30; 40
UNIT
A
V
PINNING
PIN
DESCRIPTION
PMEGXX10BEA (see Fig.1)
1
cathode
2
anode
PMEGXX10BEV (see Fig.2)
1, 2, 5, 6
3, 4
cathode
anode
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.
MARKING
TYPE NUMBER
PMEG2010BEA
PMEG3010BEA
PMEG4010BEA
PMEG2010BEV
PMEG3010BEV
PMEG4010BEV
MARKING CODE
V1
V2
V3
G6
G5
G4
1
2
1
2
sym001
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
654
123
1, 2
5, 6
3, 4
sym038
Fig.2 Simplified outline (SOT666) and symbol.
2004 Jun 14
2