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PMEGXX10BEA Datasheet, PDF (4/11 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifier
NXP Semiconductors
1 A very low VF MEGA Schottky
barrier rectifier
Product data sheet
PMEGXX10BEA;
PMEGXX10BEV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
PMEGXX10BEA (SOD323)
Rth(j-a)
thermal resistance from junction to
ambient
Rth(j-s)
thermal resistance from junction to
soldering point
PMEGXX10BEV (SOT666)
Rth(j-a)
thermal resistance from junction to
ambient
Rth(j-s)
thermal resistance from junction to
soldering point
CONDITIONS
in free air; notes 1 and 2
in free air; notes 2 and 3
note 4
in free air; notes 2 and 5
in free air; notes 2 and 6
note 4
VALUE UNIT
450
K/W
210
K/W
90
K/W
405
K/W
215
K/W
80
K/W
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
5. Refer to SOT666 standard mounting conditions.
6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/
PMEG2010BEV PMEG3010BEV PMEG4010BEV UNIT
TYP. MAX. TYP. MAX. TYP. MAX.
VF
forward voltage IF = 0.1 mA
90
130 90
130 95
130 mV
IF = 1 mA
150 190 150 200 155 210 mV
IF = 10 mA
210 240 215 250 220 270 mV
IF = 100 mA
280 330 285 340 295 350 mV
IF = 500 mA
355 390 380 430 420 470 mV
IF = 1 000 mA
420 500 450 560 540 640 mV
IR
continuous
VR = 10 V; note 1 15
40
12
30
7
20
μA
reverse current
VR = 20 V; note 1 40
200 −
−
−
−
μA
VR = 30 V; note 1 −
−
40
150 −
−
μA
VR = 40 V; note 1 −
−
−
−
30
100 μA
Cd
diode capacitance VR = 1 V; f = 1 MHz 66
80
55
70
43
50
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Jun 14
4