PMEGXX10BEA Datasheet, PDF (3/11 Pages) NXP Semiconductors – 1 A very low VF MEGA Schottky barrier rectifier

NXP Semiconductors
1 A very low V_F MEGA Schottky
barrier rectifier
Product data sheet
PMEGXX10BEA;
PMEGXX10BEV
ORDERING INFORMATION
TYPE NUMBER
PMEGXX10BEA
PMEGXX10BEV
NAME
−
PACKAGE
DESCRIPTION
plastic surface mounted package; 2 leads
plastic surface mounted package; 6 leads
VERSION
SOD323
SOT666
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_R
I_F
I_FRM
I_FSM
T_j
T_amb
T_stg
PARAMETER
continuous reverse voltage
PMEG2010BEA/PMEG2010BEV
PMEG3010BEA/PMEG3010BEV
PMEG4010BEA/PMEG4010BEV
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
junction temperature
operating ambient temperature
storage temperature
CONDITIONS
T_s ≤ 55 °C; note 1
t_p ≤ 1 ms; δ ≤ 0.5; note 2
t_p = 8 ms; square wave;
note 2
note 3
note 3
MIN. MAX. UNIT
−
20
V
−
30
V
−
40
V
−
1
A
−
3.5
A
−
10
A
−
150
°C
−65
+150 °C
−65
+150 °C
Notes
1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P_R are a significant part of the total power losses. Nomograms for determining the reverse power losses P_R and I_F(AV)
rating will be available on request.
2004 Jun 14
3