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PDTD113E Datasheet, PDF (5/10 Pages) NXP Semiconductors – NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k-ohm, R2 = 1 k-ohm
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NXP Semiconductors
PDTD113E series
NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
103
hFE
102
10
006aaa310
(1)
(2)
(3)
10−1
VCEsat
(V)
006aaa311
(1)
(2)
(3)
1
10−1
10−1
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
10
006aaa312
VI(on)
(V)
(1)
1
(2)
(3)
10−2
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa313
10
VI(off)
(V)
(1)
1
(2)
(3)
10−1
10−1
1
10
102
103
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
10−1
10−1
1
10
IC (mA)
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTD113E_SER_2
Product data sheet
Rev. 02 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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