PDTD113E Datasheet, PDF (1/10 Pages) NXP Semiconductors – NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k-ohm, R2 = 1 k-ohm

PDTD113E series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 1 kΩ, R2 = 1 kΩ
Rev. 02 — 16 November 2009
Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PDTD113EK
SOT346
PDTD113ES^[1] SOT54
PDTD113ET
SOT23
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
PDTB113EK
PDTB113ES
PDTB113ET
1.2 Features
„ Built-in bias resistors
„ Simplifies circuit design
„ 500 mA output current capability
„ Reduces component count
„ Reduces pick and place costs
„ ±10 % resistor ratio tolerance
1.3 Applications
„ Digital application in automotive and
industrial segments
„ Controlling IC inputs
„ Cost saving alternative for BC817 series
in digital applications
„ Switching loads
1.4 Quick reference data
Table 2.
Symbol
V_CEO
I_O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ Max Unit
-
-
50
V
-
-
500 mA
0.7
1
1.3 kΩ
0.9
1.0
1.1