PDTD113E Datasheet, PDF (4/10 Pages) NXP Semiconductors – NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k-ohm, R2 = 1 k-ohm

NXP Semiconductors
PDTD113E series
NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
6. Thermal characteristics
Table 7.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from in free air
junction to ambient
SOT346
SOT54
SOT23
Min
Typ
Max
[1]
-
-
500
-
-
250
-
-
500
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
K/W
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
I_CEO
collector-base cut-off
current
collector-emitter
cut-off current
V_CB = 40 V; I_E = 0 A
V_CB = 50 V; I_E = 0 A
V_CE = 50 V; I_B = 0 A
I_EBO
emitter-base cut-off V_EB = 5 V; I_C = 0 A
current
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = 5 V; I_C = 50 mA
I_C = 50 mA; I_B = 2.5 mA
V_I(off)
V_I(on)
R1
off-state input voltage V_CE = 5 V; I_C = 100 μA
on-state input voltage V_CE = 0.3 V; I_C = 20 mA
bias resistor 1 (input)
R2/R1 bias resistor ratio
C_c
collector capacitance V_CB = 10 V; I_E = i_e = 0 A;
f = 100 MHz
Min Typ Max Unit
-
-
100 nA
-
-
100 nA
-
-
0.5 μA
-
-
4
mA
33
-
-
-
-
0.3 V
0.6
1.1
1.5
V
1.0
1.4
1.8
V
0.7
1
1.3 kΩ
0.9
1
1.1
-
7
-
pF
PDTD113E_SER_2
Product data sheet
Rev. 02 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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