PDTD113E Datasheet, PDF (3/10 Pages) NXP Semiconductors – NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k-ohm, R2 = 1 k-ohm

NXP Semiconductors
PDTD113E series
NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ
3. Ordering information
4. Marking
Table 4. Ordering information
Type number Package
Name
Description
Version
PDTD113EK SC-59A plastic surface mounted package; 3 leads
SOT346
PDTD113ES^[1] SC-43A plastic single-ended leaded (through hole) package; SOT54
3 leads
PDTD113ET -
plastic surface mounted package; 3 leads
SOT23
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
Table 5. Marking codes
Type number
PDTD113EK
PDTD113ES
PDTD113ET
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code^[1]
E1
D113ES
*7R
PDTD113E_SER_2
Product data sheet
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
V_I
input voltage
positive
-
negative
-
I_O
output current (DC)
-
P_tot
total power dissipation
T_amb ≤ 25 °C
[1]
SOT346
-
SOT54
-
SOT23
-
T_stg
storage temperature
−65
T_j
junction temperature
-
T_amb
ambient temperature
−65
Max
Unit
50
V
50
V
10
V
+10
V
−10
V
500
mA
250
mW
500
mW
250
mW
+150
°C
150
°C
+150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Rev. 02 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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