74HC11 Datasheet, PDF (5/15 Pages) NXP Semiconductors – Triple 3-input AND gate

NXP Semiconductors
74HC11; 74HCT11
Triple 3-input AND gate
Table 6. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25 °C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ Max Min Max
Min
Max
C_I
input
capacitance
- 3.5 -
-
-
-
- pF
74HCT11
V_IH
HIGH-level
V_CC = 4.5 V to 5.5 V
input voltage
2.0 1.6 -
2.0
-
2.0
-V
V_IL
LOW-level
V_CC = 4.5 V to 5.5 V
input voltage
- 1.2 0.8
-
0.8
-
0.8 V
V_OH
HIGH-level
V_I = V_IH or V_IL; V_CC = 4.5 V
output voltage
I_O = −20 μA
4.4 4.5 -
4.4
-
4.4
-V
I_O = −4.0 mA
3.98 4.32 - 3.84
-
3.7
-V
V_OL
LOW-level
V_I = V_IH or V_IL; V_CC = 4.5 V
output voltage
I_O = 20 μA; V_CC = 4.5 V
-
0 0.1
-
0.1
-
0.1 V
I_I
input leakage V_I = V_CC or GND;
current
V_CC = 5.5 V
-
- ±0.1 -
±1
-
±1 μA
I_CC
supply current V_I = V_CC or GND; I_O = 0 A;
-
- 2.0
-
20
-
40 μA
V_CC = 5.5 V
ΔI_CC additional
per input pin;
- 100 360
-
450
-
490 μA
supply current V_I = V_CC − 2.1 V; I_O = 0 A;
other inputs at V_CC or GND;
V_CC = 4.5 V to 5.5 V
C_I
input
capacitance
- 3.5 -
-
-
-
- pF
10. Dynamic characteristics
Table 7. Dynamic characteristics
GND = 0 V; C_L = 50 pF; for load circuit see Figure 7.
Symbol Parameter
Conditions
74HC11
t_pd
propagation delay nA, nB to nY; see Figure 6
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 5.0 V; C_L = 15 pF
V_CC = 6.0 V
t_t
transition time
see Figure 6
V_CC = 2.0 V
V_CC = 4.5 V
V_CC = 6.0 V
C_PD
power dissipation per package; V_I = GND to V_CC
capacitance
25 °C
−40 °C to +125 °C Unit
Min Typ Max Max
Max
(85 °C) (125 °C)
[1]
-
-
-
-
[2]
-
-
-
[3]
-
32
100
125
12
20
25
9
-
-
10
17
21
19
75
95
7
15
19
6
13
16
18
-
-
150 ns
30 ns
- ns
26 ns
110 ns
22 ns
19 ns
- pF
74HC_HCT11_4
Product data sheet
Rev. 04 — 25 March 2010
© NXP B.V. 2010. All rights reserved.
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