PRTR5V0U1T Datasheet, PDF (4/11 Pages) NXP Semiconductors – Ultra low capacitance single rail-to-rail ESD protection

NXP Semiconductors
PRTR5V0U1T
Ultra low capacitance single rail-to-rail ESD protection
6. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Per channel
I_R
C_(I/O-GND)
reverse current
input/output to ground
capacitance
V_F
forward voltage
Zener diode
V_RWM
V_BR
C_sup
reverse standoff voltage
breakdown voltage
supply pin to ground
capacitance
[1] Measured from pin 1 to ground.
[2] Measured from pin 2 to ground.
Conditions
V_R = 3 V
f = 1 MHz;
V_(I/O-GND) = 0 V
f = 1 MHz;
V_CC = 0 V
Min Typ Max Unit
[1] _-
< 1 100 nA
[1] _-
1
1.5 pF
-
0.7 -
V
-
[2] ₆
[2] _-
-
5.5 V
-
9
V
16 -
pF
2.0
C_(I/O-GND)
(pF)
1.6
006aaa483
1.2
0.8
0.4
0
0
1
2
3
4
5
V_(I/O-GND) (V)
Fig 2.
f = 1 MHz; T_amb = 25 °C
Input/output to ground capacitance as a function of input/output to ground
voltage; typical values
PRTR5V0U1T_1
Product data sheet
Rev. 01 — 25 September 2008
© NXP B.V. 2008. All rights reserved.
4 of 11