PRTR5V0U1T Datasheet, PDF (3/11 Pages) NXP Semiconductors – Ultra low capacitance single rail-to-rail ESD protection

NXP Semiconductors
PRTR5V0U1T
Ultra low capacitance single rail-to-rail ESD protection
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per device
T_amb
ambient temperature
−40
T_stg
storage temperature
−55
Max Unit
+85
°C
+125 °C
Table 6. ESD maximum ratings
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Per channel
V_ESD
electrostatic discharge voltage
Conditions
IEC 61000-4-2; level 4
(contact discharge)
MIL-STD-883 (human
body model)
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 2 or 3.
Min
[1][2]
-
-
Max Unit
8
kV
10 kV
Table 7. ESD standards compliance
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
Conditions
> 8 kV (contact)
I_PP
100 %
90 %
001aaa631
10 %
t_r = 0.7 ns to 1 ns
t
30 ns
60 ns
Fig 1. ESD pulse waveform according to IEC 61000-4-2
PRTR5V0U1T_1
Product data sheet
Rev. 01 — 25 September 2008
© NXP B.V. 2008. All rights reserved.
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