M29DW641F Datasheet, PDF (67/80 Pages) Numonyx B.V – 64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

M29DW641F
Common Flash Interface (CFI)
Table 31. CFI Query System Interface Information
Address Data
Description
V_CC Logic Supply Minimum Program/Erase voltage
1Bh
0027h
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V_CC Logic Supply Maximum Program/Erase voltage
1Ch
0036h
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
V_PP [Programming] Supply Minimum Program/Erase voltage
1Dh 00B5h
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
V_PP [Programming] Supply Maximum Program/Erase voltage
1Eh
00C5h
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Fh
0004h Typical timeout per single byte/Word program = 2ⁿ µs
20h
0000h Typical timeout for minimum size write buffer program = 2ⁿ µs
21h
000Ah Typical timeout per individual block erase = 2ⁿ ms
22h
0000h Typical timeout for full Chip Erase = 2ⁿ ms
23h
0004h Maximum timeout for byte/Word program = 2ⁿ times typical
24h
0000h Maximum timeout for write buffer program = 2ⁿ times typical
25h
0003h Maximum timeout per individual block erase = 2ⁿ times typical
26h
0000h Maximum timeout for Chip Erase = 2ⁿ times typical
Value
2.7V
3.6V
11.5V
12.5V
16µs
NA
1s
NA
256 µs
NA
8s
NA
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