M29DW641F Datasheet, PDF (1/80 Pages) Numonyx B.V – 64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

M29DW641F
64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block)
3V Supply Flash Memory
Features
■ Supply voltage
– V_CC = 2.7V to 3.6V for Program, Erase and
Read
– V_PP/WP=12V for Fast Program (optional)
■ Asynchronous Page Read mode
– Page Width 8 Words
– Page Access 25, 30ns
– Random Access: 60, 70ns
■ Programming Time
– 10µs per Word typical
– 4 Words at-a-time Program
■ Memory blocks
– Quadruple Bank Memory Array:
8Mbit+24Mbit+24Mbit+8Mbit
– Parameter Blocks (at Top and Bottom)
■ Dual Operations
– While Program or Erase in a group of
banks (from 1 to 3), Read in any of the
other banks
■ Program/Erase Suspend and Resume modes
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■ Unlock Bypass Program command
– Faster Production/Batch Programming
■ Common Flash Interface
– 64 bit Security Code
■ 100,000 Program/Erase cycles per block
■ Low power consumption
– Standby and Automatic Standby
■ Extended Memory Block
– Extra block used as security block or to
store additional information
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZE)
6 x 8mm
■ Hardware Block Protection
– V_PP/WP Pin for fast program and write
protect of the four outermost parameter
blocks
■ Software Block Protection
– Standard Protection
– Password Protection
■ Electronic Signature
– Manufacturer code: 0020h
– Device code: 227Eh + 2203h + 2200h
■ ECOPACK^® packages
December 2007
Rev 5
1/80
www.numonyx.com
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