M29DW641F Datasheet, PDF (49/80 Pages) Numonyx B.V – 64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory

M29DW641F
DC and AC parameters
Table 18. Device capacitance
Symbol
Parameter⁽¹⁾
Test condition
Min
Max
Unit
C_IN
Input capacitance
C_OUT
Output capacitance
1. Sampled only, not 100% tested.
V_IN = 0V
V_OUT = 0V
6
pF
12
pF
Table 19. DC characteristics
Symbol
Parameter
Test condition
Min
Max Unit
I_LI
I_LO
I_CC1(1)
Input Leakage current
Output Leakage current
Supply current (Read)
0V ≤V_IN ≤V_CC
0V ≤V_OUT ≤V_CC
E = V_IL, G = V_IH,
f = 6MHz
I_CC2 Supply current (Standby)
E = V_CC ±0.2V,
RP = V_CC ±0.2V
I_CC3 ⁽¹⁾⁽²⁾
Supply current
(Program/Erase)
Program/Erase
Controller active
V_PP/WP =
V_IL or V_IH
V_PP/WP =
V_PPH
V_IL Input Low voltage
V_IH Input High voltage
V_PPH
Voltage for Fast Program
Acceleration
V_CC = 2.7V ±10%
I_PP
Current for Fast Program
Acceleration
V_CC =2.7V ±10%
V_OL
V_OH
V_ID
V_LKO
Output Low voltage
Output High voltage
Identification voltage
Program/Erase Lockout
Supply voltage
I_OL = 1.8mA
I_OH = –100µA
±1
µA
±1
µA
10
mA
100
µA
20
mA
20
mA
–0.5
0.8
V
0.7V_CC V_CC +0.3 V
11.5
12.5
V
15
mA
0.45
V
V_CC –0.4
V
11.5
12.5
V
1.8
2.3
V
1. In Dual Operations the Supply current will be the sum of I_CC1(read) and I_CC3 (program/erase).
2. Sampled only, not 100% tested.
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