M58WR064HU Datasheet, PDF (1/114 Pages) Numonyx B.V – 64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories

M58WR064HU
M58WR064HL
64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst)
1.8V supply Flash memories
Feature summary
■ Supply voltage
–V_DD = 1.7V to 2V for Program, Erase and
Read
– V_DDQ = 1.7V to 2V for I/O Buffers
– V_PP = 12V for fast Program (9V tolerant)
■ Multiplexed address/data
■ Synchronous / asynchronous read
– Synchronous Burst Read mode: 66MHz
– Random Access: 70ns
■ Synchronous burst read suspend
■ Programming time
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■ Memory blocks
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
■ Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
■ Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
■ Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
■ Common Flash Interface (CFI)
■ 100,000 program/erase cycles per block
FBGA
VFBGA44
7.7 x 9mm (ZB)
7.5 × 5mm (ZA)
■ Electronic signature
– Manufacturer Code: 20h
– Top Device Code,
M58WR064HU: 88C0h
– Bottom Device Code,
M58WR064HL: 88C1h
■ Package
– ECOPACK®
November 2007
Rev 5
1/114
www.numonyx.com
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