M58WR016QT Datasheet, PDF (1/110 Pages) Numonyx B.V – 16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories

M58WR016QT M58WR016QB
M58WR032QT M58WR032QB
16 Mbit and 32 Mbit (x16, Multiple Bank, Burst)
1.8V supply Flash memories
Feature summary
■ Supply voltage
– V_DD = 1.7V to 2V for Program, Erase and
Read
– V_DDQ = 1.7V to 2.24V for I/O Buffers
– V_PP = 12V for fast Program (optional)
■ Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66MHz
– Asynchronous/ Synchronous Page Read
mode
– Random access: 60ns, 70ns, 80ns
■ Synchronous Burst Read Suspend
■ Programming time
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■ Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter blocks (top or bottom location)
■ Dual operations
– Program Erase in one bank while Read in
others
– No delay between Read and Write
operations
■ Block locking
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
■ Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
■ Common Flash Interface (CFI)
■ 100,000 program/erase cycles per block
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
■ Electronic signature
– Manufacturer Code: 20h
– Device Codes:
M58WR016QT (Top): 8812h.
M58WR016QB (Bottom): 8813h
M58WR032QT (Top): 8814h
M58WR032QB (Bottom): 8815h
■ ECOPACK® package available
November 2007
Rev 2
1/110
www.numonyx.com
1