LMH7220_0805 Datasheet, PDF (5/20 Pages) National Semiconductor (TI) – High Speed Comparator with LVDS Output

Symbol
Parameter
Conditions
ΔV_OD
I_SC
I_S
V_OD Change between ‘0’ to ‘1’
V_IN Differential = ±50 mV
Short Circuit Current Output to GND OUT Q to GND Pin
Pin (Note 4)
V_IN Differential = 50 mV
OUT Q to GND Pin
V_IN Differential = 50 mV
Output Shorted Together (Note 4) OUT Q to OUT Q
V_IN Differential = 50 mV
Supply Current
Load Current Excluded
V_IN Differential = 50 mV
Min
(Note 6)
−25
Typ
(Note 5)
Max
(Note 6)
+25
5
Units
mV
5
mA
5
6.6
9
12.6
mA
+2.7V AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T_J = 25°C, V_CM = 300 mV, −50 mV < V_ID < +50 mV and R_L = 100Ω. Bold-
face limits apply at the temperature extremes. (Note 6)
Symbol
Parameter
Conditions
Min
Typ
Max
(Note 6) (Note 5) (Note 6)
Units
TR
Toggle Rate
Overdrive = ±50 mV; C_L = 2 pF @
700
880
50% Output Swing
Mb/s
t_{jitter_RMS} RMS-Random Jitter
Overdrive = 100 mV; C_L = 2 pF
Center Frequency = 70 MHz
Bandwidth = 10 Hz – 20 MHz
4.82
ps
t_PDLH
t_OD-disp
Propagation Delay
t_PDLH = (t_PDH + t_PDL ) / 2
(see figure 3 application note)
Input SR = Constant
V_ID start value = -100mV
Input Overdrive Dispersion
Overdrive 20 mV
Overdrive 50 mV
Overdrive 100 mV
Overdrive 1V
@Overdrive 20 - 100 mV
@Overdrive 100 mV - 1V
3.80
3.29
3.0
7
ns
2.60
0.83
ns
0.37
t_SR-disp Input Slew Rate Dispersion
0.05 V/ns to 1 V/ns
Overdrive 100 mV
0.23
ns
t_CM-disp
Δt_PDLH
ΔtPDHL
t_r
Input Common Mode dispersion SR = 4 V/ns; Overdrive 100 mV
V_CM = 0 to 1.5V
Q to Q Time Skew
| t_PDH - t_PDL | (Note 8)
Overdrive = 100 mV; C_L = 2 pF
Q to Q Time Skew
| t_PDL - t_PDH | (Note 8)
Overdrive = 100 mV; C_L = 2 pF
Output Rise Time (20% - 80%) (Note Overdrive = 100 mV; C_L = 2 pF
9)
0.16
ns
0.09
ns
0.09
ns
0.64
ns
t_f
Output Fall Time (20% - 80%) (Note Overdrive = 100 mV; C_L = 2 pF
9)
0.59
ns
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Conditions indicate specifications for which the
device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical
Characteristics.
Note 2: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)
Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC)
Note 3: The maximum power dissipation is a function of T_J(MAX), θ_JA. The maximum allowable power dissipation at any ambient temperature is
P_D = (T_J(MAX) – T_A)/ θ_JA. All numbers apply for packages soldered directly onto a PC Board.
Note 4: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150°C.
Note 5: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 6: All limits are guaranteed by testing or statistical analysis.
Note 7: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that T_J = T_A. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self heating where T_J >
T_A. See applications section for information on temperature de-rating of this device.
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