LMH6559_06 Datasheet, PDF (5/22 Pages) National Semiconductor (TI) – High-Speed, Closed-Loop Buffer

3V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T_J = 25˚C, V⁺ = 3V, V^− = 0V, V_O = V_CM = V⁺/2 and R_L = 100Ω to V⁺/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
(Note 8) (Note 7) (Note 8)
Units
FPBW Full Power Bandwidth (−3dB)
Time Domain Response
V_O = 1V_PP (+4.5dBm)
265
MHZ
t_r
Rise Time
t_f
Fall Time
t_s
Settling Time to ±0.1%
OS
Overshoot
1.0V Step (20-80%)
1V Step
0.5V Step
0.8
ns
1.2
ns
10
ns
0
%
SR
Slew Rate
(Note 10)
770
V/µs
Distortion And Noise Performance
HD2
2^nd Harmonic Distortion
HD3
3^rd Harmonic Distortion
THD
Total Harmonic Distortion
e_n
Input-Referred Voltage Noise
CP
1dB Compression point
SNR
Signal to Noise Ratio
Static, DC Performance
V_O = 2V_PP, f = 20MHz
V_O = 2V_PP, f = 20MHz
V_O = 2V_PP, f = 20MHz
f = 1MHz
f = 10MHz
f > 100kHz, BW = 5MHz,
V_O = 350mVrms
−74
dBc
−57
dBc
−56
dBc
3.9
nV/
+4
dBm
92
dB
A_CL
Small Signal Voltage Gain
V_OS
Input Offset Voltage
V_O = 100mV_PP
R_L = 100Ω to V⁺/2
V_O = 100mV_PP
R_L = 2kΩ to V⁺/2
.97
.995
V/V
.99
.998
1
7
mV
9
TC V_OS
Temperature Coefficient Input
Offset Voltage
(Note 11)
3.5
µV/˚C
I_B
Input Bias Current
(Note 9)
−3
−1.5
µA
−3.5
TC I_B
R_OUT
PSRR
I_S
Temperature Coefficient Input
Bias Current
Output Resistance
Power Supply Rejection Ratio
Supply Current
(Note 11)
R_L = 100Ω to V⁺/2, f = 100kHz
R_L = 100Ω to V⁺/2, f = 10MHz
V_S = +3V to V_S = +3.5V,
V_IN = V⁺/2
No Load
0.46
nA/˚C
1.8
Ω
2.3
48
68
dB
46
2.4
3.5
mA
4.5
Miscellaneous Performance
R_IN
Input Resistance
23
kΩ
C_IN
Input Capacitance
2.3
pF
V_O
Output Swing Positive
R_L = 100Ω to V⁺/2
2.02
2.07
R_L = 2kΩ to V⁺/2
1.95
V
2.12
2.17
2.02
Output Swing Negative
R_L = 100Ω to V⁺/2
R_L = 2kΩ to V⁺/2
.930
.970
1.050
V
.830
.880
.980
I_SC
Output Short Circuit Current
Sourcing: V_IN = +V_S, V_O = V⁺/2
−32
mA
Sinking: V_IN = −V_S, V_O = V⁺/2
15
5
www.national.com