LMH6559_06 Datasheet, PDF (2/22 Pages) National Semiconductor (TI) – High-Speed, Closed-Loop Buffer

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Wave Soldering (10 sec.)
Storage Temperature Range
Junction Temperature
260˚C
−65˚C to +150˚C
+150˚C
ESD Tolerance (Note 2)
Human Body Model
Machine Model
Output Short Circuit Duration
Supply Voltage (V⁺ – V^−)
Voltage at Input/Output Pins
Soldering Information
Infrared or Convection (20 sec.)
2000V
200V
(Note 3), (Note 4)
13V
V⁺ +0.8V, V^− −0.8V
235˚C
Operating Ratings (Note 1)
Supply Voltage (V⁺ - V^−)
3 - 10V
Temperature Range (Notes 5, 6)
−40˚C to +85˚C
Package Thermal Resistance (Notes 5, 6)
8-Pin SOIC
172˚C/W
5-Pin SOT23
235˚C/W
±5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T_J = 25˚C, V⁺ = +5V, V^− = −5V, V_O = V_CM = 0V and R_L = 100Ω to 0V.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
(Note 8) (Note 7) (Note 8)
Units
Frequency Domain Response
SSBW
GFN
Small Signal Bandwidth
Gain Flatness < 0.1dB
FPBW Full Power Bandwidth (−3dB)
DG
Differential Gain
V_O < 0.5V_PP
V_O < 0.5V_PP
V_O = 2V_PP (+10dBm)
R_L = 150Ω to 0V,
f = 3.58 MHz
1750
200
1050
0.06
MHz
MHz
MHZ
%
DP
Differential Phase
R_L = 150Ω to 0V,
f = 3.58 MHz
0.02
deg
Time Domain Response
t_r
Rise Time
t_f
Fall Time
t_s
Settling Time to ±0.1%
OS
Overshoot
3.3V Step (20-80%)
3.3V Step
1V Step
0.4
ns
0.5
ns
9
ns
4
%
SR
Slew Rate
(Note 10)
4580
V/µs
Distortion And Noise Performance
HD2
2^nd Harmonic Distortion
HD3
3^rd Harmonic Distortion
THD
Total Harmonic Distortion
e_n
Input-Referred Voltage Noise
CP
1dB Compression point
SNR
Signal to Noise Ratio
Static, DC Performance
V_O = 2V_PP, f = 20MHz
V_O = 2V_PP, f = 20MHz
V_O = 2V_PP, f = 20MHz
f = 1MHz
f = 10MHz
f > 100kHz, BW = 5MHz,
V_O = 350mVrms
−58
dBc
−53
dBc
−52
dBc
5.7
nV/
+23
dBm
89
dB
A_CL
Small Signal Voltage Gain
V_OS
Input Offset Voltage
V_O = 100mV_PP
R_L = 100Ω to 0V
V_O = 100mV_PP
R_L = 2kΩ to 0V
.97
.996
V/V
.99
.998
3
20
mV
25
TC V_OS Temperature Coefficient Input
Offset Voltage
(Note 11)
23
µV/˚C
I_B
Input Bias Current
(Note 9)
−10
−3
µA
−14
TC I_B
Temperature Coefficient Input
Bias Current
(Note 11)
−3.6
nA/˚C
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