LMH6559_06 Datasheet, PDF (4/22 Pages) National Semiconductor (TI) – High-Speed, Closed-Loop Buffer

5V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T_J = 25˚C, V⁺ = 5V, V^− = 0V, V_O = V_CM = V⁺/2 and R_L = 100Ω to V⁺/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
(Note 8) (Note 7) (Note 8)
Units
CP
SNR
1dB Compression point
Signal to Noise Ratio
Static, DC Performance
f = 10MHz
f > 100kHz, BW = 5MHz,
V_O = 350mVrms
+7
dBm
92
dB
A_CL
Small Signal Voltage Gain
V_OS
Input Offset Voltage
V_O = 100mV_PP
R_L = 100Ω to V⁺/2
V_O = 100mV_PP
R_L = 2kΩ to V⁺/2
.97
.996
V/V
.99
.998
1.52
12
mV
16
TC V_OS Temperature Coefficient Input
Offset Voltage
(Note 11)
23
µV/˚C
I_B
Input Bias Current
(Note 9)
−5
−2.7
µA
−8
TC I_B
Temperature Coefficient Input
Bias Current
(Note 11)
1.6
nA/˚C
R_OUT
Output Resistance
R_L = 100Ω to V⁺/2, f = 100kHz
1.4
R_L = 100Ω to V⁺/2, f = 10MHz
1.6
Ω
PSRR Power Supply Rejection Ratio
V_S = +5V to V_S = +5.5V,
48
68
dB
V_IN = V_S/2
44
I_S
Supply Current
No Load
4.7
7
mA
8.5
Miscellaneous Performance
R_IN
Input Resistance
C_IN
Input Capacitance
V_O
Output Swing Positive
Output Swing Negative
I_SC
Output short circuit Current
I_O
Linear Output Current
22
kΩ
2.0
pF
R_L = 100Ω to V⁺/2
3.80
3.88
R_L = 2kΩ to V⁺/2
3.75
V
3.94
3.98
3.92
R_L = 100Ω to V⁺/2
R_L = 2kΩ to V⁺/2
1.12
1.20
1.25
V
1.03
1.06
1.09
Sourcing: V_IN = +V_S, V_O = V⁺/2
−57
mA
Sinking: V_IN = −V_S, V_O = V⁺/2
26
Sourcing: V_IN - V_O = 0.5V
−50
−64
(Note 9)
−43
mA
Sinking: V_IN - V_O = −0.5V
30
42
(Note 9)
23
3V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T_J = 25˚C, V⁺ = 3V, V^− = 0V, V_O = V_CM = V⁺/2 and R_L = 100Ω to V⁺/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
(Note 8) (Note 7) (Note 8)
Units
Frequency Domain Response
SSBW Small Signal Bandwidth
GFN
Gain Flatness < 0.1dB
V_O < 0.5V_PP
V_O < 0.5V_PP
315
MHz
44
MHz
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