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DS92CK16_06 Datasheet, PDF (5/12 Pages) National Semiconductor (TI) – 3V BLVDS 1 to 6 Clock Buffer/Bus Transceiver
Switching Characteristics
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified (Notes 7, 8).
Symbol
Parameter
Conditions
Min
DIFFERENTIAL RECEIVER CHARACTERISTICS
tPHLDR
Differential Propagation Delay High to Low. CLKI/O to CL = 15 pF
1.3
CLKOUT
VID = 250 mV
tPLHDR
Differential Propagation Delay Low to High. CLKI/O to Figures 1, 2
1.3
CLKOUT
tSK1R
Duty Cycle Distortion(Note 10)
(pulse skew)
|tPLH– tPHL|
tSK2R
Channel to Channel Skew; Same Edge (Note 11)
tSK3R
Part to Part Skew (Note 12)
tTLHR
Transition Time Low to High (Note 9)
0.4
(20% to 80% )
tTHLR
Transition Time High to Low(Note 9)
0.4
(80% to 20% )
tPLHOER Propagation Delay Low to High
( OEto CLKOUT)
tPHLOER Propagation Delay High to Low
(OE to CLKOUT)
fMAX
Maximum Operating Frequency (Note 15)
DIFFERENTIAL DRIVER TIMING REQUIREMENTS
CL = 15 pF
1.0
Figures 3, 4
1.0
100
tPHLDD
Differential Propagation Delay High to Low. CrdCLKIN to CL = 15 pF
0.5
CLKI/O
RL = 37.5Ω
tPLHDD
Differential Propagation Delay Low to High. CrdCLKIN to Figures 6, 7
0.5
CLKI/O
tPHLCrd
CrdCLKIN to CLKOUT Propagation Delay High to Low CL = 15 pF
2.0
tPLHCrd
CrdCLKIN to CLKOUT Propagation Delay Low to High Figures 8, 9
2.0
tSK1D
Duty Cycle Distortion (pulse skew)
|tPLH–tPHL| (Note 13)
tSK2D
Differential Part-to-Part Skew (Note 14)
tTLHD
Differential Transition Time (Note 9)
0.4
(20% to 80% )
tTHLD
Differential Transition Time (Note 9)
0.4
(80% to 20% )
tPHZD
tPLZD
tPZHD
tPZLD
Transition Time High to TRI-STATE. DE to CLKI/O
Transition Time Low to TRI-STATE. DE to CLKI/O
Transition Time TRI-STATE to High. DE to CLKI/O
Transition Time TRI-STATE to Low. DE to CLKI/O
VIN = 0V to VCC
CL = 15 pF,
RL = 37.5Ω
Figures 10, 11
fMAX
Maximum Operating Frequency (Note 15)
100
Typ
2.8
2.9
100
30
1.4
1.3
3
3
125
1.8
1.8
4.5
4.5
0.75
0.75
125
Max Units
3.8
ns
3.8
ns
400
ps
80
ps
2.5
ns
2.4
ns
2.2
ns
4.5
ns
4.5
ns
MHz
2.5
ns
2.5
ns
6.0
ns
6.0
ns
600
ps
2.0
ns
1.4
ns
1.4
ns
10
ns
10
ns
32
ns
32
ns
MHz
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. These ratings are not meant to imply that the
devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: ESD Rating: ESD qualification is performed per the following: HBM (1.5 kΩ, 100 pF), Machine Model (250V, 0Ω), IEC 1000-4-2. All VCC pins connected
together, all ground pins connected together.
Note 3: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VID, VOD,
VTH, and VTL.
Note 4: All typicals are given for: VCC = +3.3V and TA = +25˚C.
Note 5: The VCMR range is reduced for larger VID. Example: If VID=400 mV, then VCMR is 0.2V to 2.2V A VID up to |VCC–0V| may be applied between the
CLKI/O+ and CLKI/O− inputs, with the Common Mode set to VCC/2.
Note 6: Only one output should be momentarily shorted at a time. Do not exceed package power dissipation rating.
Note 7: CL includes probe and fixture capacitance.
Note 8: Generator waveform for all tests unless otherwise specified: f = 25 MHz, Zo = 50Ω, tr = 1 ns, tf = 1 ns (10%–90%). To ensure fastest propagation delay and
minimum skew, clock input edge rates should not be slower than 1 ns/V; control signals not slower than 3 ns/V. In general, the faster the input edge rate, the better
the AC performance.
Note 9: All device output transition times are based on characterization measurements and are guaranteed by design.
5
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