LMH6321 Datasheet, PDF (4/21 Pages) National Semiconductor (TI) – 300 mA High Speed Buffer with Adjustable Current Limit

±5V Electrical Characteristics
The following specifications apply for Supply Voltage = ±5V, V_CM = 0, R_L ≥ 100 kΩ and R_S = 50Ω, C_L Open, unless otherwise
noted. Boldface limits apply for T_A = T_J = T_MIN to T_MAX; all other limits T_A = T_J = 25˚C.
Symbol
Parameter
Conditions
Min
Typ
Max Units
A_V
Voltage Gain
R_L = 1 kΩ, V_IN = ±3V
R_L = 50Ω, V_IN = ±3V
0.99 0.994
0.98
V/V
0.86
0.92
0.84
V_OS
Offset Voltage
R_L = 1 kΩ, R_S = 0V
±2.5
±35
±50
mV
I_B
Input Bias Current
V_IN = 0V, R_L = 1 kΩ, R_S = 0V
±2
±15
±17
µA
R_IN
Input Resistance
C_IN
Input Capacitance
R_O
Output Resistance
I_S
Power Supply Current
R_L = 50Ω
I_OUT = ±10 mA
R_L = ∞, V_IN = 0V
250
kΩ
3.5
pF
5
Ω
10
13.5
14.7
750 µA into CL Pin
14
17.5
19.5
V_O1
Positive Output Swing
Negative Output Swing
I_O = 300 mA, R_S = 0V, V_IN = ±V_S
I_O = 300 mA, R_S = 0V, V_IN = ±V_S
1.3
1.9
0.9
V
−1.3
−0.5
−0.1
V_O2
Positive Output Swing
R_L = 1 kΩ, R_S = 0V, V_IN = ±V_S
3.2
3.5
V
2.9
Negative Output Swing
R_L = 1 kΩ, R_S = 0V, V_IN = ±V_S
−3.5
−3.1
V
−2.9
V_O3
Positive Output Swing
R_L = 50Ω, R_S = 0V, V_IN = ±V_S
2.8
3.1
V
2.5
Negative Output Swing
R_L = 50Ω, R_S = 0V, V_IN = ±V_S
−3.0
−2.6
V
−2.4
PSSR Power Supply Rejection Ratio R_L = 1 kΩ, V_IN = 0,
Positive
58
66
V_S = ±5V to ±15V
54
dB
Negative
58
64
54
I_SC1
Output Short Circuit Current V_O = 0V, Program
Sourcing
Current into C_L = 25 µA V_IN = +3V
Sinking
4.5
9
14.0
4.5
15.5
4.5
9
14.0
V_O = 0V, Program
Current into C_L = 750
µA
V_IN = −3V
Sourcing
V_IN = +3V
Sinking
4.5
15.5
mA
275
290
305
270
320
275
290
310
I_SC2
Output Short Circuit Current
Source
Output Short Circuit Current
Sink
R_S = 0V, V_IN = +3V
(Notes 5, 7)
R_S = 0V, V_IN = −3V
(Notes 5, 7)
V_IN = −3V
270
320
300
470
mA
300
400
SR
Slew Rate
BW
LSBW
T_SD
−3 dB Bandwidth
Large Signal Bandwidth
Thermal Shutdown
V_IN = ±2 V_PP, R_L = 1 kΩ
V_IN = ±2 V_PP, R_L = 50Ω
V_IN = ±20 mV_PP, R_L = 50Ω
V_IN = 2 V_PP, R_L = 50Ω
Temperature
Hysteresis
450
V/µs
210
90
MHz
39
MHz
170
˚C
10
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