LMH6560 Datasheet, PDF (3/23 Pages) National Semiconductor (TI) – Quad, High-Speed, Closed-Loop Buffer

±5V Electrical Characteristics (Continued)
Unless otherwise specified, all limits guaranteed for T_J = 25˚C, V⁺ = +5V, V^− = −5V, V_O = V_CM = 0V and R_L = 100Ω to 0V.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
(Note 9) (Note 8) (Note 9)
Units
I_B
Input Bias Current
(Note 10)
−10
−5
µA
−14
TC I_B
Temperature Coefficient Input
Bias Current
(Note 12)
−4.7
nA/˚C
R_OUT
PSRR
I_S
Output Resistance
Power Supply Rejection Ratio
Supply Current, All 4 Buffers
R_L = 100Ω to 0V; f = 100kHz
R_L = 100Ω to 0V; f = 10MHz
V_S = ±5V to V_S = ±5.25V;
V_IN = 0V
No Load
1.5
Ω
1.6
48
67
dB
44
46
58
mA
63
Miscellaneous Performance
R_IN
Input Resistance
C_IN
Input Capacitance
V_O
Output Swing Positive
R_L = 100Ω to 0V
R_L = 2kΩ to 0V
100
kΩ
2
pF
3.10
3.34
3.08
V
3.58
3.64
3.55
Output Swing Negative
R_L = 100Ω to 0V
R_L = 2kΩ to 0V
I_SC
Output Short Circuit Current
Sourcing: V_IN = V⁺; V_O = 0V
Sinking: V_IN = V^−; V_O = 0V
I_O
Linear Output Current
Sourcing: V_IN - V_O = 0.5V
(Note 10)
Sinking: V_IN - V_O = −0.5V
(Note 10)
−3.34
−3.20
−3.17
V
−3.64
−3.58
−3.55
−83
mA
83
−50
−74
−42
mA
50
74
40
5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T_J = 25˚C, V⁺ = +5V, V^− = 0V, V_O = V_CM = V⁺/2 and R_L = 100Ω to V⁺/2.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
(Note 9) (Note 8) (Note 9)
Units
Frequency Domain Response
SSBW
GFN
Small Signal Bandwidth
Gain Flatness < 0.1dB
FPBW Full Power Bandwidth (−3dB)
DG
Differential Gain
DP
Differential Phase
V_O < 0.5V_PP
V_O < 0.5V_PP
V_O = 2V_PP (+10dBm)
R_L = 150Ω to V⁺/2;
f = 3.58MHz
R_L = 150Ω to V⁺/2;
f = 3.58MHz
455
MHz
75
MHz
175
MHZ
0.4
%
0.09
deg
Time Domain Response
t_r
Rise Time
t_f
Fall Time
t_s
Settling Time to 0.1%
OS
Overshoot
2.3V_PP Step (20-80%)
2.3V Step
1V Step
0.8
ns
1.0
ns
10
ns
0
%
SR
Slew Rate
(Note 11)
1445
V/µs
3
www.national.com