LMH6560 Datasheet, PDF (2/23 Pages) National Semiconductor (TI) – Quad, High-Speed, Closed-Loop Buffer

Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Wave Soldering (10 sec.)
Storage Temperature Range
Junction Temperature (Note 6)
260˚C
−65˚C to +150˚C
+150˚C
ESD Tolerance
Human Body Model
Machine Model
Output Short Circuit Duration
Supply Voltage (V⁺ –V^−)
Voltage at Input/Output Pins
Soldering Information
Infrared or Convection (20 sec.)
2000V (Note 2)
200V (Note 3)
(Note 4),(Note 5)
13V
V⁺ +0.8V, V^− −0.8V
235˚C
Operating Ratings (Note 1)
Supply Voltage (V⁺ –V^−)
3-10V
Operating Temperature Range
−40˚C to +85˚C
(Note 6), (Note 7)
Package Thermal Resistance (Note 6), (Note 7)
14-Pin SOIC
137˚C/W
14-Pin TSSOP
160˚C/W
±5V Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T_J = 25˚C, V⁺ = +5V, V^− = −5V, V_O = V_CM = 0V and R_L = 100Ω to 0V.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
(Note 9) (Note 8) (Note 9)
Units
Frequency Domain Response
SSBW
GFN
Small Signal Bandwidth
Gain Flatness < 0.1dB
FPBW Full Power Bandwidth (−3dB)
DG
Differential Gain
V_O < 0.5V_PP
V_O < 0.5V_PP
V_O = 2V_PP (+10dBm)
R_L = 150Ω to 0V;
f = 3.58MHz
680
MHz
375
MHz
280
MHZ
0.10
%
DP
Differential Phase
R_L = 150Ω to 0V;
f = 3.58MHz
0.03
deg
Time Domain Response
t_r
Rise Time
t_f
Fall Time
t_s
Settling Time to 0.1%
OS
Overshoot
3.3V Step (20-80%)
3.3V Step
1V Step
0.6
ns
0.7
ns
9
ns
4
%
SR
Slew Rate
(Note 11)
3100
V/µs
Distortion And Noise Performance
HD2
2^nd Harmonic Distortion
HD3
3^rd Harmonic Distortion
THD
Total Harmonic Distortion
e_n
Input-Referred Voltage Noise
CP
1dB Compression Point
V_O = 2V_PP; f = 20MHz
V_O = 2V_PP; f = 20MHz
V_O = 2V_PP; f = 20MHz
f = 1MHz
f = 10MHz
−58
dBc
−52
dBc
−51
dBc
3
nV/
+23
dBm
CT
Amplifier Crosstalk
SNR
AGM
Signal to Noise Ratio
Amplifier Gain Matching
Static, DC Performance
Receiving Amplifier:
R_S = 50Ω to 0V; f = 10MHz
f = 5MHz; V_O = 1V_PP
R_L = 2kΩ to 0V; f = 5MHz;
V_O = 1V_PP
−55
dB
120
dB
0.05
dB
A_CL
Small Signal Voltage Gain
V_OS
Input Offset Voltage
V_O = 100mV_PP
R_L = 100Ω to 0V
V_O = 100mV_PP
R_L = 2kΩ to 0V
0.97
0.995
V/V
0.99
0.998
2
20
mV
25
TC V_OS Temperature Coefficient Input
Offset Voltage
(Note 12)
28
µV/˚C
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