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LMH6505 Datasheet, PDF (3/20 Pages) National Semiconductor (TI) – Wideband, Low Power, Linear-in-dB, Variable Gain Amplifier
Electrical Characteristics(Note 2) (Continued)
Unless otherwise specified, all limits are guaranteed for TJ = 25˚C, VS = ±5V, AVMAX = 9.4 V/V, RF = 1 kΩ, RG = 100Ω, VIN =
±0.1V, RL = 100Ω, VG = +2V. Boldface limits apply at the temperature extremes.
Min
Typ
Max
Symbol
Parameter
Conditions
(Note 6) (Note 6) (Note 6) Units
VIN NL
VIN L
Input Voltage Range
RG Open
RG = 100Ω
±3
±0.60
±0.74
V
±0.50
I RG_MAX RG Current
Pin 3
±6.0
±7.4
mA
±5.0
IBIAS
Bias Current
Pin 2 (Note 7)
−0.6
−2.5
µA
−2.6
TC IBIAS
RIN
CIN
IVG
TC IVG
R VG
C VG
VOUT L
Bias Current Drift
Input Resistance
Input Capacitance
VG Bias Current
VG Bias Drift
VG Input Resistance
VG Input Capacitance
Output Voltage Range
VOUT NL
ROUT
IOUT
Output Impedance
Output Current
VO
OFFSET
Output Offset Voltage
Pin 2 (Note 8)
Pin 2
Pin 2
Pin 1, VG = 2V (Note 7)
Pin 1 (Note 8)
Pin 1
Pin 1
RL = 100Ω
RL = Open
DC
VOUT = ±4V from Rails
0V < VG < 2V
±2.1
±1.9
±60
±40
–190
7
2.8
0.9
10
25
2.8
±2.4
±3.1
0.12
±80
±10
pA/˚C
MΩ
pF
µA
pA/˚C
MΩ
pF
V
Ω
mA
±55
mV
±70
+PSRR +Power Supply Rejection Ratio
Input Referred, 1V change,
–65
–72
dB
(Note 9)
VG = 2.2V
−PSRR −Power Supply Rejection Ratio
Input Referred, 1V change,
–65
–75
(Note 9)
VG = 2.2V
IS
Supply Current
No Load
9.5
11
7.5
dB
14
mA
16
3
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